march 2012 ?2012 fairchild semiconductor corporation FDMS7650DC rev.c3 www.fairchildsemi.com 1 FDMS7650DC n-channel dual cool tm powertrench ? mosfet fdms7650 dc n-channel dual cool tm powertrench ? mosfet 30 v, 100 a, 0.99 m features ? dual cool tm top side cooling pqfn package ? max r ds(on) = 0.99 m at v gs = 10 v, i d = 36 a ? max r ds(on) = 1.55 m at v gs = 4.5 v, i d = 32 a ? high performance technology for extremely low r ds(on) ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced powertrench ? process. advancements in both silicon and dual cool tm package technologies have been combined to offer the lowest r ds(on) while maintaining excellent swit ching performance by extremely low junction-to-ambient thermal resistance. applications ? synchronous rectifier for dc/dc converters ? telecom secondary side rectification ? high end server/workstation mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage (note 4) 20 v i d drain current -continuous (package limited) t c = 25 c 100 a -continuous (silicon limited) t c = 25 c 289 -continuous t a = 25 c (note 1a) 47 -pulsed 200 e as single pulse avalanche energy (note 3) 578 mj dv/dt peak diode recovery dv/dt (note 5) 0.5 v/ns p d power dissipation t c = 25 c 125 w power dissipation t a = 25 c (note 1a) 3.3 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case (top source) 2.3 c/w r jc thermal resistance, junction to case (bottom drain) 1 r ja thermal resistance, junction to ambient (note 1a) 38 r ja thermal resistance, junction to ambient (note 1b) 81 r ja thermal resistance, junction to ambient (note 1i) 16 r ja thermal resistance, junction to ambient (note 1j) 23 r ja thermal resistance, junction to ambient (note 1k) 11 device marking device package reel size tape width quantity 7650 FDMS7650DC dual cool tm power 56 13 ?? 12 mm 3000 units bottom top pin 1 d d d d g s s s power 56 g s s s d d d d 5 6 7 8 3 2 1 4
www.fairchildsemi.com 2 ?2012 fairchild semiconductor corporation FDMS7650DC rev.c3 FDMS7650DC n-channel dual cool tm powertrench ? mosfet electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 30 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 12 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gss gate to source leakage current, forward v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.1 1.9 2.7 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -7 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 36 a 0.6 0.99 m v gs = 4.5 v, i d = 32 a 1 1.55 v gs = 10 v, i d = 36 a, t j = 125 c 0.9 1.5 g fs forward transconductance v ds = 5 v, i d = 36 a 225 s c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1 mhz 11100 14765 pf c oss output capacitance 3440 4575 pf c rss reverse transfer capacitance 205 310 pf r g gate resistance 1.3 t d(on) turn-on delay time v dd = 15 v, i d = 36 a, v gs = 10 v, r gen = 6 29 46 ns t r rise time 28 45 ns t d(off) turn-off delay time 81 130 ns t f fall time 20 32 ns q g total gate charge v gs = 0 v to 10 v v dd = 15 v, i d = 36 a 147 206 nc q g total gate charge v gs = 0 v to 4.5 v 62 87 nc q gs gate to source charge 38 nc q gd gate to drain ?miller? charge 9.7 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.7 1.2 v v gs = 0 v, i s = 36 a (note 2) 0.8 1.3 t rr reverse recovery time i f = 36 a, di/dt = 100 a/ s 75 120 ns q rr reverse recovery charge 61 98 nc
www.fairchildsemi.com 3 ?2012 fairchild semiconductor corporation FDMS7650DC rev.c3 FDMS7650DC n-channel dual cool tm powertrench ? mosfet thermal characteristics r jc thermal resistance, junction to case (top source) 2.3 c/w r jc thermal resistance, junction to case (bottom drain) 1 r ja thermal resistance, junction to ambient (note 1a) 38 r ja thermal resistance, junction to ambient (note 1b) 81 r ja thermal resistance, junction to ambient (note 1c) 27 r ja thermal resistance, junction to ambient (note 1d) 34 r ja thermal resistance, junction to ambient (note 1e) 16 r ja thermal resistance, junction to ambient (note 1f) 19 r ja thermal resistance, junction to ambient (note 1g) 26 r ja thermal resistance, junction to ambient (note 1h) 61 r ja thermal resistance, junction to ambient (note 1i) 16 r ja thermal resistance, junction to ambient (note 1j) 23 r ja thermal resistance, junction to ambient (note 1k) 11 r ja thermal resistance, junction to ambient (note 1l) 13 notes: 1. r ja is determined with the device mounted on a fr-4 board using a specified pad of 2 oz copper as shown below. r jc is guaranteed by design while r ca is determined by the user's board design. c. still air, 20.9x10.4x12.7mm aluminum heat sink, 1 in 2 pad of 2 oz copper d. still air, 20.9x10.4x12.7mm aluminum heat sink, minimum pad of 2 oz copper e. still air, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, 1 in 2 pad of 2 oz copper f. still air, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, minimum pad of 2 oz copper g. 200fpm airflow, no heat sink,1 in 2 pad of 2 oz copper h. 200fpm airflow, no heat sink, minimum pad of 2 oz copper i. 200fpm airflow, 20.9x10.4x12.7mm aluminum heat sink, 1 in 2 pad of 2 oz copper j. 200fpm airflow, 20.9x10.4x12.7mm aluminum heat sink, minimum pad of 2 oz copper k. 200fpm airflow, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, 1 in 2 pad of 2 oz copper l. 200fpm airflow, 45.2x41.4x11.7mm aavid thermalloy part # 10-l41b-11 heat sink, minimum pad of 2 oz copper 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 3. e as of 578 mj is based on starting t j = 25 o c; n-ch: l = 1 mh, i as = 34 a, v dd = 27 v, v gs = 10 v. 4. as an n-ch device, the negative vgs rating is for low duty cycle pulse ocurrence only. no continuous rating is implied. 5. i sd 36 a, di/dt 100 a/ s, v dd bv dss , starting t j = 25 o c. a. 38 c/w when mounted on a 1 in 2 pad of 2 oz copper b. 81 c/w when mounted on a minimum pad of 2 oz copper
www.fairchildsemi.com 4 ?2012 fairchild semiconductor corporation FDMS7650DC rev.c3 FDMS7650DC n-channel dual cool tm powertrench ? mosfet typical characteristics t j = 25 c unless otherwise noted figure 1. 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 v gs = 6 v v gs = 4 v v gs = 3.5 v v gs = 4.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 50 100 150 200 0 1 2 3 4 5 v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 4 v v gs = 4.5 v v gs = 6 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 36 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 24681 0 0 1 2 3 4 t j = 125 o c i d = 36 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1.52.02.53.03.54.0 0 50 100 150 200 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 0.1 1 10 100 200 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
www.fairchildsemi.com 5 ?2012 fairchild semiconductor corporation FDMS7650DC rev.c3 FDMS7650DC n-channel dual cool tm powertrench ? mosfet figure 7. 0 30 60 90 120 150 0 2 4 6 8 10 i d = 36 a v dd = 20 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 15 v gate charge characteristics figure 8. 0.1 1 10 100 1000 10000 50000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 30 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1000 10000 1 10 100 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) 40 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 50 100 150 200 250 300 v gs = 4.5 v limited by package r t jc = 1.0 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.01 0.1 1 10 100200 0.01 0.1 1 10 100 500 10 ms 10 s 100 ms dc 1 s 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 81 o c/w t a = 25 o c figure 12. 10 -3 10 -2 10 -1 110 100 1000 1 10 100 1000 2000 single pulse r t ja = 81 o c/w t a = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 6 ?2012 fairchild semiconductor corporation FDMS7650DC rev.c3 FDMS7650DC n-channel dual cool tm powertrench ? mosfet figure 13. junction-to-ambient transient thermal response curve 10 -3 10 -2 10 -1 11 0 100 1000 0.001 0.01 0.1 1 single pulse r t ja = 81 o c/w duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
www.fairchildsemi.com 7 ?2012 fairchild semiconductor corporation FDMS7650DC rev.c3 FDMS7650DC n-channel dual cool tm powertrench ? mosfet dimensional outlin e and pad layout
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